This resulted within a diminished get the job done functionality as well as formation of a Schottky Get in touch with in between the BrGO and n-variety Si substrate. As a result of the upper proportion of B-C and B-C3 bonding while in the BrGO/Si device than that during the rGO/Si, the reduced Schottky barrier peak with the BrGO/n-Si vertical junct